Breakthrough in Submicron Transistor Thermal Simulation through Efficient Phonon BTE Method
Chinese Academy of SciencesThis study presents a highly efficient thermal simulation method using a non-gray phonon Boltzmann transport equation. By integrating first-principles phonon properties and advanced computational techniques, the method avoids empirical parameters and achieves remarkable efficiency, solving large-scale 3D problems in under two hours on a personal computer. It enables predictive design of nanostructures with specific thermal conductivity and accurately resolves temperature profiles at the transistor level, aiding in understanding self-heating effects in electronics.